Electron Trajectory¶
Trajectory Simulator computes electron trajectories inside a sample by the Monte-Carlo method: incident electrons undergo elastic and inelastic scattering, and the resulting distributions of backscattered electrons (direction, energy, penetration depth) are accumulated. These distributions also feed the angular/energy/depth weighting used by the 12. EBSD simulation.
Keyboard & mouse shortcuts¶
The trajectories are shown in a 3-D OpenGL view. It uses ReciPro's standard view navigation, but panning is disabled — use the view-preset buttons to jump to the standard orientations.
| Shortcut | Action |
|---|---|
| F1 | Open this page of the online manual |
| Left-drag | Rotate the model |
| Right-drag up/down, or Mouse wheel | Zoom |
| CTRL + Right double-click | Toggle orthographic / perspective projection |
→ See 21. Keyboard & mouse shortcuts for every window at a glance.
Calculation Conditions¶
Beam energy, number of incident electrons, sample/material, and other Monte-Carlo parameters (see the overview screenshot above).
Beam energy¶
Accelerating voltage of the incident electron beam (keV). Sets the kinetic energy used for both elastic (Mott) and inelastic (dielectric-response) scattering models.
Number of incident electrons¶
How many electrons to simulate. More electrons reduce statistical noise but increase run time linearly.
Sample / material¶
Composition and density of the sample. Defaults to the crystal currently selected in the main window, but can be overridden for trajectory-only studies.
Sample tilt¶
Sample tilt angle. Used when the trajectory data feeds the EBSD simulator (typically 70° for EBSD).
Cross-section model¶
The elastic-scattering cross-section model (Mott / Bethe / NIST). Different models trade speed for accuracy at high tilt angles or near absorption edges.
Stereonet Options¶
Display options for the angular distribution drawn on the stereographic projection (see the overview screenshot above).
Projection method¶
Wulff (equal-angle) or Schmidt (equal-area) projection. Schmidt is usually preferred when reading off statistical density.
Hemisphere¶
Plots the upper (back-scattered) or lower (transmitted) hemisphere.
Resolution / Colour scale¶
Bin size of the angular histogram and the colour map used for the density display.
Statistics¶
Summary of the run.
- Backscatter yield — fraction of incident electrons that exit through the entrance surface.
- Mean free path — average distance between scattering events.
- Mean penetration depth — average maximum depth reached by an electron before either exiting or being absorbed.
- Elapsed time / Throughput — wall-clock cost of the run.
BSE direction distribution¶
Angular distribution of the backscattered electrons (the stereonet centre corresponds to the surface normal direction). The yellow/orange outline (when present) marks the region subtended by the EBSD detector.
Profiles¶
Depth and energy profiles of the simulated electrons.
Depth profile¶
Histogram of the final exit depth (nm) of the backscattered electrons. Used by the EBSD simulator to weight the depth integration of the master pattern.
Energy profile¶
Histogram of the energy loss ΔE (keV) of the backscattered electrons. Used by the EBSD simulator to weight the energy integration.